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IGW30N65L5XKSA1 - Infineon

Description: IGBT Transistors 650V IGBT Trenchstop 5

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IGW30N65L5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IGW30N65L5XKSA1-
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IGW30N65L5XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IGW30N65L5XKSA1-
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IGW30N65L5XKSA1 Details

  • Manufacturer Part Number:

    IGW30N65L5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    85 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    520 ns

  • Turn-on Time-Nom (ton):

    44 ns

IGW30N65L5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IGW30N65L5XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the device to dissipate heat efficiently.
  • The recommended gate resistor value for the IGW30N65L5XKSA1 is typically in the range of 10-20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IGW30N65L5XKSA1 is suitable for high-reliability applications. Infineon Technologies AG follows rigorous testing and qualification procedures to ensure the device meets the required standards for reliability and quality.
  • To protect the IGW30N65L5XKSA1 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use ESD-protective packaging and materials during storage and transportation.

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IGW30N65L5XKSA1 Overview

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Part Image IGW30N65L5 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247