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IGW40N65H5 - Infineon

Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

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IGW40N65H5 - Infineon - PCB symbol
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PCB Footprints
IGW40N65H5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IGW40N65H5
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IGW40N65H5 - Infineon - 3D model - Transistor Outline, Vertical - IGW40N65H5
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IGW40N65H5 Details

  • Manufacturer Part Number:

    IGW40N65H5

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    74 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    178 ns

  • Turn-on Time-Nom (ton):

    34 ns

  • VCEsat-Max:

    2.1 V

IGW40N65H5 Frequently Asked Questions (FAQs)

  • The maximum allowed voltage imbalance is typically ±10% of the nominal DC link voltage. Exceeding this limit may lead to uneven current sharing and reduced module reliability.
  • Proper thermal management involves ensuring good heat transfer between the module and the heat sink, using a thermal interface material (TIM) with a thermal resistance of ≤ 0.1 Kcm²/W, and maintaining a maximum junction temperature (Tj) of ≤ 150°C.
  • The recommended gate resistance (Rg) is typically in the range of 10 Ω to 20 Ω. A higher Rg value can help reduce electromagnetic interference (EMI) but may also increase switching losses.
  • Yes, the IGW40N65H5 module can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing and oscillations.
  • The maximum allowed dv/dt for the IGW40N65H5 module is typically ≤ 10 kV/μs. Exceeding this limit may lead to voltage overshoots, oscillations, and reduced module reliability.

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IGW40N65H5 Overview

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