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IGW50N60T - Infineon

Description: IGBT Transistors LOW LOSS IGBT TECH 600V 50A

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PCB Footprints
IGW50N60T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3 HEIGHT=5.21
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3D Models
IGW50N60T - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3 HEIGHT=5.21
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IGW50N60T Details

  • Manufacturer Part Number:

    IGW50N60T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    FAST SWITCHING

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    396 ns

  • Turn-on Time-Nom (ton):

    60 ns

IGW50N60T Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGW50N60T is 150°C, but it's recommended to operate it at a maximum junction temperature of 125°C for reliable operation.
  • Proper cooling of the IGW50N60T is crucial. Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of ≤ 0.5 K/W. Also, ensure good airflow around the heat sink.
  • The recommended gate resistor value for the IGW50N60T is between 10 Ω and 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency.
  • Yes, the IGW50N60T can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the IGW50N60T is ±10% of the rated voltage. Exceeding this limit may damage the device.

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IGW50N60T Overview

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