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IGW50N65F5FKSA1 - Infineon

Description: IGBT Transistors IGBT PRODUCTS

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IGW50N65F5FKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3006
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3D Models
IGW50N65F5FKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - 3006
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IGW50N65F5FKSA1 Details

  • Manufacturer Part Number:

    IGW50N65F5FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    205 ns

  • Turn-on Time-Nom (ton):

    35 ns

  • VCEsat-Max:

    2.1 V

IGW50N65F5FKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IGW50N65F5FKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IGW50N65F5FKSA1 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 22 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
  • Yes, the IGW50N65F5FKSA1 is suitable for high-reliability applications. Infineon Technologies AG follows a rigorous quality control process, and the device is manufactured using a robust and reliable process. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device operates within its specified parameters.
  • To protect the IGW50N65F5FKSA1 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the workspace is ESD-protected, and use ESD-safe packaging and storage materials. Avoid touching the device's pins or exposed internal components, and use a grounded tip soldering iron when assembling the device.

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IGW50N65F5FKSA1 Overview

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