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IHW20N120R2 - Infineon

Description: IGBT NPT, Trench Field Stop 1200 V 40 A 330 W Through Hole PG-TO247-3-1

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IHW20N120R2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO-247-3-1
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IHW20N120R2 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO-247-3-1
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IHW20N120R2 Details

  • Manufacturer Part Number:

    IHW20N120R2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AD

  • Package Description:

    GREEN, PLASTIC, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    526 ns

IHW20N120R2 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the IHW20N120R2 in their application note AN2013-03-01. It includes guidelines for thermal vias, copper thickness, and heat sink attachment.
  • To ensure reliable operation in high-temperature environments, it's essential to follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and cooling system design.
  • Infineon recommends using a gate drive circuit with a voltage swing of 15V to 20V and a current capability of at least 2A to ensure reliable switching. A dedicated gate driver IC, such as the Infineon 1EDC or 2EDC family, can be used.
  • To protect the IHW20N120R2 from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and an overcurrent protection circuit, such as a fuse or a current sense resistor.
  • To prevent damage, it's essential to follow proper storage and handling procedures, including storing the devices in their original packaging, avoiding exposure to moisture, and handling the devices by the body rather than the leads.

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