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IHW20N120R3 - Infineon

Description: Infineon IHW20N120R3, IGBT Transistor, 40 A 1200 V, 3-Pin TO-247

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Symbol
IHW20N120R3 - Infineon - PCB symbol
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PCB Footprints
IHW20N120R3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IGW50N60H3FKSA1 -
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3D Models
IHW20N120R3 - Infineon - 3D model - Transistor Outline, Vertical - IGW50N60H3FKSA1 -
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IHW20N120R3 Details

  • Manufacturer Part Number:

    IHW20N120R3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    538 ns

IHW20N120R3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IHW20N120R3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a maximum temperature of 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured.
  • The recommended gate resistor value for the IHW20N120R3 is between 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IHW20N120R3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the IHW20N120R3 is specified in the datasheet as 1200 V. However, it's recommended to limit the voltage transient to 1000 V to ensure reliable operation and prevent damage to the device.

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IHW20N120R3 Overview

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