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IHW20N65R5 - Infineon

Description: IGBT Transistors IGBT PRODUCTS TrenchStop 5

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Symbol
IHW20N65R5 - Infineon - PCB symbol
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PCB Footprints
IHW20N65R5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO- 247-3
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3D Models
IHW20N65R5 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO- 247-3
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IHW20N65R5 Details

  • Manufacturer Part Number:

    IHW20N65R5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    310 ns

  • Turn-on Time-Nom (ton):

    38 ns

  • VCEsat-Max:

    1.7 V

IHW20N65R5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for IHW20N65R5 is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application notes and/or contacting their technical support. Generally, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • Proper thermal management is crucial for the IHW20N65R5. Ensure the device is mounted on a suitable heat sink with a thermal interface material (TIM) and follow Infineon's recommended thermal design guidelines. Additionally, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj) when designing the thermal management system.
  • The recommended gate drive voltage for IHW20N65R5 is typically between 10V to 15V, with a current capability of up to 2A. However, the specific gate drive requirements may vary depending on the application and switching frequency. Consult Infineon's application notes and/or gate driver datasheets for more information.
  • The IHW20N65R5 is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. Infineon offers other devices with enhanced reliability and quality features, such as the TRENCHSTOP™ IGBT series, which may be more suitable for these applications.
  • The internal diode in the IHW20N65R5 can be handled by ensuring proper dead-time management in the gate drive circuitry and using a suitable anti-parallel diode if necessary. Consult Infineon's application notes and/or gate driver datasheets for more information on preventing cross-conduction and ensuring reliable operation.

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IHW20N65R5 Overview

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