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IHW25N120R2FKSA1 - Infineon

Description: IGBT TrenchStop NChannel 1.2KV 50A TO247

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IHW25N120R2FKSA1 - Infineon - PCB symbol
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PCB Footprints
IHW25N120R2FKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247
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3D Models
IHW25N120R2FKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO247
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IHW25N120R2FKSA1 Details

  • Manufacturer Part Number:

    IHW25N120R2FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Package Description:

    GREEN, PLASTIC, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    463.6 ns

IHW25N120R2FKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IHW25N120R2FKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W for the IHW25N120R2FKSA1.
  • The recommended gate resistor value for the IHW25N120R2FKSA1 is between 10Ω and 20Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon support for more information.
  • Yes, the IHW25N120R2FKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The recommended dead time for the IHW25N120R2FKSA1 is typically between 100ns and 200ns. However, the optimal dead time may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon support for more information.

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IHW25N120R2FKSA1 Overview

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