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IHW30N110R3FKSA1 - Infineon

Description: INFINEON - IHW30N110R3FKSA1 - IGBT Single Transistor, 60 A, 1.55 V, 333 W, 1.1 kV, TO-247, 3 Pins

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IHW30N110R3FKSA1 - Infineon - PCB symbol
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PCB Footprints
IHW30N110R3FKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3*---
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3D Models
IHW30N110R3FKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 247-3*---
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IHW30N110R3FKSA1 Details

  • Manufacturer Part Number:

    IHW30N110R3FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1100 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    470 ns

IHW30N110R3FKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IHW30N110R3FKSA1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • Proper cooling is crucial for the IHW30N110R3FKSA1. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1-2°C/W is recommended.
  • The recommended gate drive voltage for the IHW30N110R3FKSA1 is between 10-15V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, the IHW30N110R3FKSA1 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism to prevent damage to the device. A fuse or a current-sensing resistor can be used for OCP, while a zener diode or a voltage regulator can be used for OVP.

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IHW30N110R3FKSA1 Overview

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