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IHW30N65R5XKSA1 - Infineon

Description: INFINEON - IHW30N65R5XKSA1 - IGBT, SINGLE, 650V, 60A, TO-247

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Symbol
IHW30N65R5XKSA1 - Infineon - PCB symbol
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PCB Footprints
IHW30N65R5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-247_3
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3D Models
IHW30N65R5XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-247_3
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IHW30N65R5XKSA1 Details

  • Manufacturer Part Number:

    IHW30N65R5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    258 ns

  • Turn-on Time-Nom (ton):

    44 ns

IHW30N65R5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IHW30N65R5XKSA1 is -55°C to 175°C, as specified in the datasheet.
  • To ensure safe operating area (SOA), follow the guidelines in the datasheet, considering factors like voltage, current, and temperature. Additionally, use a thermal model to simulate the device's behavior under various operating conditions.
  • The recommended gate drive voltage for the IHW30N65R5XKSA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and implementing filtering. Additionally, consider using a gate driver with built-in EMI mitigation features.
  • The maximum allowed drain-source voltage (Vds) for the IHW30N65R5XKSA1 is 650V, as specified in the datasheet.

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IHW30N65R5XKSA1 Overview

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