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IHW40N120R5XKSA1 - Infineon

Description: INFINEON - IHW40N120R5XKSA1 - IGBT, 80 A, 1.55 V, 394 W, 1.2 kV, TO-247, 3 Pins

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Symbol
IHW40N120R5XKSA1 - Infineon - PCB symbol
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PCB Footprints
IHW40N120R5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IGW50N60H3FKSA1asa
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3D Models
IHW40N120R5XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - IGW50N60H3FKSA1asa
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IHW40N120R5XKSA1 Details

  • Manufacturer Part Number:

    IHW40N120R5XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    394 W

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    440 ns

  • VCEsat-Max:

    1.85 V

IHW40N120R5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IHW40N120R5XKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IHW40N120R5XKSA1. Ensure good thermal contact between the device and the heat sink, and use a suitable thermal interface material. The heat sink should be designed to provide adequate airflow and heat dissipation.
  • The recommended gate resistor value for the IHW40N120R5XKSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the IHW40N120R5XKSA1 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the parallel configuration. Consult the datasheet and application notes for more information.
  • The maximum allowable voltage transient for the IHW40N120R5XKSA1 is specified in the datasheet as 1200 V. However, it's recommended to limit voltage transients to 10% of the maximum voltage rating to ensure device reliability.

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IHW40N120R5XKSA1 Overview

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