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IHW40N60RF - Infineon

Description: Infineon IHW40N60RF, IGBT Transistor, 80 A 600 V, 3-Pin TO-247

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Symbol
IHW40N60RF - Infineon - PCB symbol
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PCB Footprints
IHW40N60RF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-247_3
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3D Models
IHW40N60RF - Infineon - 3D model - Transistor Outline, Vertical - PG-247_3
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IHW40N60RF Details

  • Manufacturer Part Number:

    IHW40N60RF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    228 ns

IHW40N60RF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IHW40N60RF is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device and ensure good thermal contact. The heat sink should be designed to dissipate heat efficiently, and the device should be mounted in a way that allows for good airflow. Additionally, the device's thermal pad should be connected to a solid ground plane to help dissipate heat.
  • The recommended gate drive voltage for the IHW40N60RF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions. It's recommended to consult the datasheet and application notes for more information.
  • To protect the IHW40N60RF from overvoltage and overcurrent, it's recommended to use a voltage regulator or a DC-DC converter to regulate the input voltage. Additionally, overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC. It's also recommended to use a fuse or a circuit breaker to protect against overcurrent conditions.
  • The recommended PCB layout for the IHW40N60RF involves using a multi-layer PCB with a solid ground plane and a separate power plane. The device's thermal pad should be connected to the ground plane, and the PCB should be designed to minimize parasitic inductance and capacitance. It's also recommended to use a Kelvin connection for the gate driver to minimize noise and ensure reliable operation.

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IHW40N60RF Overview

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