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IHW40N65R5 - Infineon

Description: Infineon IHW40N65R5, IGBT Transistor, 40 A Dual 650 V, 3-Pin PG-TO-247

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IHW40N65R5 - Infineon  - 3D model
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IHW40N65R5 Details

  • Manufacturer Part Number:

    IHW40N65R5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    321 ns

  • Turn-on Time-Nom (ton):

    59 ns

IHW40N65R5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IHW40N65R5 is 175°C. However, it's recommended to operate it at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IHW40N65R5. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, consider using a thermal interface material to fill any gaps.
  • The recommended gate drive voltage for the IHW40N65R5 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IHW40N65R5 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • A good PCB layout for the IHW40N65R5 should minimize parasitic inductance and ensure good thermal dissipation. Use a solid ground plane, keep the gate drive traces short and wide, and ensure good thermal vias to the heat sink.

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IHW40N65R5 Overview

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