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IHW40T120 - Infineon

Description: • Short circuit withstand time – 10µs • Designed for : - Soft Switching Applications - Induction Heating • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Very soft, fast recovery anti-parallel EmCon™ HE diode • Low EMI • Qualified according to JEDEC1 for target applications • Application spe

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PCB Footprints
IHW40T120 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3
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3D Models
IHW40T120 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3
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IHW40T120 Details

  • Manufacturer Part Number:

    IHW40T120

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    700 ns

  • Turn-on Time-Nom (ton):

    92 ns

IHW40T120 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2019-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The IHW40T120 can withstand a maximum overcurrent of 2.5 times the nominal current for a short duration (typically 10ms). To protect the module, use a fast-acting fuse or a current sensing circuit with a shutdown mechanism to prevent damage from overcurrent conditions.
  • Ensure good thermal contact between the module and the heat sink by applying a thin layer of thermal interface material. Use a heat sink with a thermal resistance of ≤ 0.5 K/W and a fan with a minimum airflow of 200 L/min to maintain a junction temperature below 125°C.
  • Store the module in a dry, cool place (≤ 30°C, ≤ 60% RH) away from direct sunlight. Handle the module by the edges to prevent damage to the pins or internal components. Avoid bending or flexing the module during handling or installation.

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