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IKB15N65EH5ATMA1 - Infineon

Description: IGBT Trench Field Stop 650 V 30 A 105 W Surface Mount PG-TO263-3

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IKB15N65EH5ATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3(H=4.82mm)
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IKB15N65EH5ATMA1 Details

  • Manufacturer Part Number:

    IKB15N65EH5ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    105 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    180 ns

  • Turn-on Time-Nom (ton):

    34 ns

  • VCEsat-Max:

    2.1 V

IKB15N65EH5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IKB15N65EH5ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IKB15N65EH5ATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, IKB15N65EH5ATMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the thermal management is adequate.
  • The maximum allowable voltage transient for IKB15N65EH5ATMA1 is 650 V, with a maximum duration of 10 μs.

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