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IKB20N60H3ATMA1 - Infineon

Description: IGBT Trench Field Stop 600 V 40 A 170 W Surface Mount PG-TO263-3

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IKB20N60H3ATMA1 - Infineon - PCB symbol
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IKB20N60H3ATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3_2025-1.2
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IKB20N60H3ATMA1 Details

  • Manufacturer Part Number:

    IKB20N60H3ATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    241 ns

  • Turn-on Time-Nom (ton):

    31 ns

IKB20N60H3ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKB20N60H3ATMA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The maximum current rating of the IKB20N60H3ATMA1 is 20A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.
  • To protect the IKB20N60H3ATMA1 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) diode, and implement overcurrent protection using a fuse or a current-sensing resistor.
  • The recommended gate drive voltage for the IKB20N60H3ATMA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.

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IKB20N60H3ATMA1 Overview

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