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IKB40N65ES5ATMA1 - Infineon

Description: IGBT Transistors INDUSTRY 14

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PCB Footprints
IKB40N65ES5ATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2020
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IKB40N65ES5ATMA1 Details

  • Manufacturer Part Number:

    IKB40N65ES5ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    79 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    204 ns

  • Turn-on Time-Nom (ton):

    36 ns

  • VCEsat-Max:

    1.7 V

IKB40N65ES5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IKB40N65ES5ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IKB40N65ES5ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IKB40N65ES5ATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • Use a suitable overvoltage protection circuit, such as a TVS diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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