FDMC86570L Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDMC86570L onsemi	1	High performance technology for extremely low rDS(on); Shielded Gate MOSFET Technology ; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A ; Termination is Lead-free ; RoHS Compliant; Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A	Other	FDMC86570L	3D model available Symbol and footprint available 3	1 Download Model
	FDMC86570L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 18A I(D), 60V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA		FDMC86570L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMC86570LET60 onsemi	1	Termination is Lead-free ; Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A ; High performance technology for extremely low rDS(on) ; RoHS Compliant; Shielded Gate MOSFET Technology ; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A	Other	FDMC86570LET60	3D model available Symbol and footprint available 3	1 Download Model
	FDMC86570LET60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FDMC86570LET60	3D model not available Symbol and footprint not available 0	0 Build or Request

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