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IKD06N60RATMA1 - Infineon

Description: IGBT Trench Field Stop 600 V 12 A 100 W Surface Mount PG-TO252-3

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IKD06N60RATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3_2024-11
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IKD06N60RATMA1 Details

  • Manufacturer Part Number:

    IKD06N60RATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    12 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    335 ns

  • Turn-on Time-Nom (ton):

    22 ns

IKD06N60RATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IKD06N60RATMA1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and cooling systems.
  • The recommended gate resistor value for the IKD06N60RATMA1 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IKD06N60RATMA1 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between devices.
  • To protect the IKD06N60RATMA1, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and consider adding a fuse or a current limiter to prevent damage from excessive currents.

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IKD06N60RATMA1 Overview

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Part Image IKD06N60R Infineon Technologies AG

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252