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IKFW50N60ETXKSA1 - Infineon

Description: IGBT Transistors Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.

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PCB Footprints
IKFW50N60ETXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247_1
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3D Models
IKFW50N60ETXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247_1
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IKFW50N60ETXKSA1 Details

  • Manufacturer Part Number:

    IKFW50N60ETXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    73 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    164 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    332 ns

  • Turn-on Time-Nom (ton):

    61 ns

  • VCEsat-Max:

    2 V

IKFW50N60ETXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKFW50N60ETXKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted and secured. Additionally, consider the thermal resistance of the heat sink and the PCB layout to minimize thermal impedance.
  • The recommended gate drive voltage for the IKFW50N60ETXKSA1 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure proper operation.
  • Yes, the IKFW50N60ETXKSA1 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the gate drive circuitry is capable of providing a fast switching signal. Additionally, consider the PCB layout and parasitic inductances to minimize ringing and oscillations.
  • To protect the IKFW50N60ETXKSA1 from overvoltage and overcurrent, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These can include voltage clamping devices, such as zener diodes or TVS diodes, and current sensing resistors or fuses. Additionally, ensure the device is operated within its specified voltage and current ratings.

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