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IKFW50N65DH5XKSA1 - Infineon

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IKFW50N65DH5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IKFW50N65DH5XKSA1
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IKFW50N65DH5XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IKFW50N65DH5XKSA1
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IKFW50N65DH5XKSA1 Details

  • Manufacturer Part Number:

    IKFW50N65DH5XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    59 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    124 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    177 ns

  • Turn-on Time-Nom (ton):

    57 ns

  • VCEsat-Max:

    2.25 V

IKFW50N65DH5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKFW50N65DH5XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the thermal resistance of the heat sink and the PCB layout to minimize thermal impedance.
  • The recommended gate drive voltage for the IKFW50N65DH5XKSA1 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • To protect the IKFW50N65DH5XKSA1 from overvoltage and overcurrent, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. These circuits can be implemented using external components such as zener diodes, resistors, and fuses. Additionally, ensure the device is operated within its specified voltage and current ratings.
  • The recommended PCB layout for the IKFW50N65DH5XKSA1 involves keeping the power traces short and wide to minimize inductance and resistance. Ensure the drain pad is connected to a solid copper plane to provide a good thermal interface. Additionally, consider the placement of decoupling capacitors and gate drive components to minimize noise and ensure proper operation.

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IKFW50N65DH5XKSA1 Overview

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