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IKP04N60T - Infineon

Description: IGBT Transistors LOW LOSS DuoPack 600V, 4A, PG-TO-220-3-1 Package

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IKP04N60T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO-220-3-1
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3D Models
IKP04N60T - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO-220-3-1
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IKP04N60T Details

  • Manufacturer Part Number:

    IKP04N60T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH SWITCHING SPEED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    207 ns

  • Turn-on Time-Nom (ton):

    21 ns

IKP04N60T Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the IKP04N60T is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN2013-03, which provides guidelines for calculating the SOA of power MOSFETs.
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, including the recommended PCB layout and thermal pad design. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • The recommended gate drive voltage for the IKP04N60T is between 10V and 15V, as stated in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the IKP04N60T is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, gate charge, and parasitic capacitances to ensure reliable operation.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design to prevent damage to the IKP04N60T. You can use zener diodes, TVS diodes, or dedicated OVP/OCP ICs to achieve this.

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IKP04N60T Overview

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Part Image IKP04N60THKSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB