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IKP06N60T - Infineon

Description: Infineon IKP06N60T, IGBT Transistor, 6:00 AM Dual 600 V, 3+Tab-Pin PG-TO-220

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Symbol
IKP06N60T - Infineon - PCB symbol
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PCB Footprints
IKP06N60T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3_2021
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3D Models
IKP06N60T - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-3_2021
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IKP06N60T Details

  • Manufacturer Part Number:

    IKP06N60T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    12 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    249 ns

  • Turn-on Time-Nom (ton):

    17 ns

IKP06N60T Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of IKP06N60T is not explicitly stated in the datasheet. However, Infineon provides a SOA curve in the application note AN-1071, which can be used to determine the maximum safe operating area for a given application.
  • The thermal interface material (TIM) can significantly affect the thermal performance of IKP06N60T. A good TIM can reduce the thermal resistance between the device and the heat sink, improving the overall thermal performance. Infineon recommends using a TIM with a thermal conductivity of at least 3 W/mK.
  • Infineon provides guidelines for PCB layout and thermal design in the application note AN-1111. The recommended layout includes a large copper area for heat dissipation, and the use of thermal vias to connect the top and bottom layers of the PCB.
  • The parasitic inductance and capacitance of IKP06N60T can affect the performance of the device in high-frequency applications. Infineon recommends using a layout that minimizes the loop area and uses shielding to reduce electromagnetic interference (EMI). Additionally, the use of a snubber circuit can help to reduce the effects of parasitic inductance and capacitance.
  • The recommended gate drive voltage for IKP06N60T is between 10 V and 15 V, with a current capability of up to 2 A. However, the actual gate drive voltage and current required will depend on the specific application and the desired switching performance.

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IKP06N60T Overview

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