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IKW20N60T - Infineon

Description: IGBT Transistors LOW LOSS DuoPack 600V 20A

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IKW20N60T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IKW20N60T
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3D Models
IKW20N60T - Infineon  - 3D model - Transistor Outline, Vertical - IKW20N60T
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IKW20N60T Details

  • Manufacturer Part Number:

    IKW20N60T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    166 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    299 ns

  • Turn-on Time-Nom (ton):

    36 ns

IKW20N60T Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKW20N60T is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, applying a thin layer of thermal interface material (TIM) between the device and heat sink can improve heat transfer.
  • The recommended gate drive voltage for the IKW20N60T is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance, but may also increase the switching losses.
  • To protect the IKW20N60T from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, a fuse or a current sense resistor can be used to detect overcurrent conditions.
  • The maximum allowed dv/dt for the IKW20N60T is 50 V/ns. Exceeding this value can cause the device to malfunction or fail.

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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC