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IKW25N120T2 - Infineon

Description: IGBT in 2nd generation TrenchStop®

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Symbol
IKW25N120T2 - Infineon - PCB symbol
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PCB Footprints
IKW25N120T2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3
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3D Models
IKW25N120T2 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 247-3
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IKW25N120T2 Details

  • Manufacturer Part Number:

    IKW25N120T2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247AD

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    349 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    504 ns

  • Turn-on Time-Nom (ton):

    49 ns

IKW25N120T2 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the IKW25N120T2 is 20 kHz, but it can be used up to 50 kHz with some limitations. However, it's recommended to consult with Infineon's application notes for specific use cases.
  • Proper thermal management is crucial for the IKW25N120T2. Ensure good heat sink contact, use a thermal interface material, and maintain a maximum junction temperature of 150°C. Consult the datasheet for thermal impedance and thermal resistance values.
  • The recommended gate resistor value for the IKW25N120T2 is between 10 Ω to 20 Ω. However, the optimal value depends on the specific application and switching frequency. Consult Infineon's application notes for more information.
  • Yes, the IKW25N120T2 can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and synchronized to avoid uneven current sharing. Consult Infineon's application notes for guidelines on parallel operation.
  • The maximum allowable overcurrent for the IKW25N120T2 is 2.5 times the nominal current (120 A) for a maximum of 10 ms. However, it's recommended to consult the datasheet and application notes for specific overcurrent protection requirements.

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IKW25N120T2 Overview

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IKW25N120T2 Alternates

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Part Image IKW25N120T2FKSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD