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IKW30N65ES5 - Infineon

Description: IGBT Transistors Trenchstop 5 IGBT

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IKW30N65ES5 - Infineon - PCB symbol
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PCB Footprints
IKW30N65ES5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IGW50N60H3FKSA1 -
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3D Models
IKW30N65ES5 - Infineon - 3D model - Transistor Outline, Vertical - IGW50N60H3FKSA1 -
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IKW30N65ES5 Details

  • Manufacturer Part Number:

    IKW30N65ES5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    62 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    204 ns

  • Turn-on Time-Nom (ton):

    30 ns

  • VCEsat-Max:

    1.7 V

IKW30N65ES5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IKW30N65ES5 is -40°C to 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good thermal conductivity between the device and the heat sink.
  • The recommended gate drive voltage for the IKW30N65ES5 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IKW30N65ES5 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.
  • The maximum allowed voltage for the IKW30N65ES5 is 650V, with a maximum repetitive peak voltage of 750V.

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IKW30N65ES5 Overview

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IKW30N65ES5 Alternates

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Part Image IKW30N65ES5XKSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 62A I(C), 650V V(BR)CES, N-Channel, TO-247