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IKW40N120CS6XKSA1 - Infineon

Description: INFINEON - IKW40N120CS6XKSA1 - IGBT, 1.2KV, 80A, 500W, TO-247

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Symbol
IKW40N120CS6XKSA1 - Infineon - PCB symbol
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PCB Footprints
IKW40N120CS6XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3_1-1
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3D Models
IKW40N120CS6XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO247-3_1-1
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IKW40N120CS6XKSA1 Details

  • Manufacturer Part Number:

    IKW40N120CS6XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.3 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    445 ns

  • Turn-on Time-Nom (ton):

    65 ns

  • VCEsat-Max:

    2.15 V

IKW40N120CS6XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKW40N120CS6XKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IKW40N120CS6XKSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IKW40N120CS6XKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for the IKW40N120CS6XKSA1 is specified as 1200 V for a duration of 1 microsecond. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the device.

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IKW40N120CS6XKSA1 Overview

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