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IKW40N120T2 - Infineon

Description: IGBT TrenchStop NChannel 1.2KV 75A TO247 Infineon IKW40N120T2, IGBT Transistor, 75 A 1200 V, 1MHz, 3-Pin TO-247

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PCB Footprints
IKW40N120T2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247
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3D Models
IKW40N120T2 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247
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IKW40N120T2 Details

  • Manufacturer Part Number:

    IKW40N120T2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247AD

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    600 ns

  • Turn-on Time-Nom (ton):

    60 ns

IKW40N120T2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the IKW40N120T2 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IKW40N120T2 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 22 Ω is suitable for most applications. However, it's essential to consult the datasheet and application notes for more specific guidance.
  • Yes, the IKW40N120T2 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate charge, and thermal performance when designing the application. Consult the datasheet and application notes for more information on high-frequency operation.
  • To protect the IKW40N120T2 from overvoltage and overcurrent, it's essential to implement proper protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Additionally, consider using a gate driver with built-in protection features, such as undervoltage lockout (UVLO) and overcurrent detection.

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