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IKW40N65ES5XKSA1 - Infineon

Description: INFINEON - IKW40N65ES5XKSA1 - IGBT Single Transistor, 79 A, 1.35 V, 230 W, 650 V, TO-247, 3 Pins

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PCB Footprints
IKW40N65ES5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3_2023-1
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IKW40N65ES5XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3_2023-1
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IKW40N65ES5XKSA1 Details

  • Manufacturer Part Number:

    IKW40N65ES5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    79 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    204 ns

  • Turn-on Time-Nom (ton):

    36 ns

IKW40N65ES5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IKW40N65ES5XKSA1 is -55°C to 175°C.
  • To ensure safe operating area (SOA) for the IKW40N65ES5XKSA1, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the application's thermal management and ensure the device is operated within its specified temperature range.
  • The recommended gate resistor value for the IKW40N65ES5XKSA1 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω to ensure proper switching and minimize ringing.
  • To handle electrostatic discharge (ESD) protection for the IKW40N65ES5XKSA1, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices in the circuit design.
  • The maximum allowable voltage for the gate-source voltage (VGS) of the IKW40N65ES5XKSA1 is ±20 V.

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IKW40N65ES5XKSA1 Overview

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Part Image IKW40N65ES5 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 79A I(C), 650V V(BR)CES, N-Channel, TO-247