IKW50N120CS7XKSA1 footprint, schematic symbol and 3D model by Infineon

Symbol

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PCB Footprints

IKW50N120CS7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - pg-to247-3

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3D Models

IKW50N120CS7XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - pg-to247-3

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Datasheet Download Datasheet
Stock & Prices Price & Stock for IKW50N120CS7XKSA1
Part Number IKW50N120CS7XKSA1
Manufacturer Infineon
Pin Count 3
Part Category Transistor IGBT
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - pg-to247-3
Released Date Aug 19, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IKW50N120CS7XKSA1 Details

Manufacturer Part Number:
IKW50N120CS7XKSA1
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Germany, Mainland China
ECCN Code:
EAR99
Factory Lead Time:
53 Weeks, 1 Day
Manufacturer:
Infineon Technologies AG
YTEOL:
5
Collector Current-Max (IC):
82 A
Collector-Emitter Voltage-Max:
1200 V
Configuration:
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max:
6.45 V
Gate-Emitter Voltage-Max:
20 V
JEDEC-95 Code:
TO-247
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
428 W
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
270 ns
Turn-on Time-Nom (ton):
48 ns
VCEsat-Max:
2 V

IKW50N120CS7XKSA1 Frequently Asked Questions (FAQs)

The maximum operating temperature of the IKW50N120CS7XKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
To ensure proper thermal management, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
The recommended gate resistor value for the IKW50N120CS7XKSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
Yes, the IKW50N120CS7XKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the datasheet and application notes for more information on parallel operation.
The recommended dead time for the IKW50N120CS7XKSA1 is typically around 1-2 microseconds. However, the optimal dead time may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.

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IKW50N120CS7XKSA1 - Infineon

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IKW50N120CS7XKSA1 Frequently Asked Questions (FAQs)

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