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IKW50N60DTPXKSA1 - Infineon

Description: IGBTs INDUSTRY

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IKW50N60DTPXKSA1 - Infineon  - 3D model
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IKW50N60DTPXKSA1 Details

  • Manufacturer Part Number:

    IKW50N60DTPXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    332 ns

  • Turn-on Time-Nom (ton):

    55 ns

IKW50N60DTPXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IKW50N60DTPXKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IKW50N60DTPXKSA1 is between 10 Ω to 20 Ω, depending on the specific application and switching frequency.
  • Yes, IKW50N60DTPXKSA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the devices are properly matched to avoid uneven current sharing.
  • The maximum allowable voltage transient for IKW50N60DTPXKSA1 is ±5% of the maximum rated voltage, and it's essential to use a suitable snubber circuit to limit voltage transients.

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IKW50N60DTPXKSA1 Overview

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Part Image IKW50N60DTP Infineon Technologies AG

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247