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IKW50N60H3FKSA1 - Infineon

Description: IGBT Transistors HIGH SPEED SWITCHINGTRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

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IKW50N60H3FKSA1 - Infineon - PCB symbol
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PCB Footprints
IKW50N60H3FKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IKW50N60H3FKSA1
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IKW50N60H3FKSA1 - Infineon - 3D model - Transistor Outline, Vertical - IKW50N60H3FKSA1
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IKW50N60H3FKSA1 Details

  • Manufacturer Part Number:

    IKW50N60H3FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    297 ns

  • Turn-on Time-Nom (ton):

    54 ns

IKW50N60H3FKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKW50N60H3FKSA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.
  • The maximum allowed drain-source voltage (Vds) for the IKW50N60H3FKSA1 is 600V, as specified in the datasheet.

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