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IKW50N65ES5 - Infineon

Description: TRENCHSTOPTM5softswitchingIGBT

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IKW50N65ES5 Details

  • Manufacturer Part Number:

    IKW50N65ES5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    274 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    198 ns

  • Turn-on Time-Nom (ton):

    45 ns

  • VCEsat-Max:

    1.7 V

IKW50N65ES5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the IKW50N65ES5 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IKW50N65ES5 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 100 Ω is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
  • Yes, the IKW50N65ES5 is suitable for high-reliability applications. It's manufactured using Infineon's proprietary OptiMOS technology, which ensures high reliability and ruggedness. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the IKW50N65ES5 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a TVS (transient voltage suppressor) diode to protect the device from voltage spikes and transients.

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IKW50N65ES5 Overview

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Part Image IKW50N65ES5XKSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247