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IKW50N65H5FKSA1 - Infineon

Description: Infineon IKW50N65H5FKSA1 IGBT, 80 A 650 V, 3-Pin TO-247

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IKW50N65H5FKSA1 - Infineon - PCB symbol
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PCB Footprints
IKW50N65H5FKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-247_3
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3D Models
IKW50N65H5FKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-247_3
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IKW50N65H5FKSA1 Details

  • Manufacturer Part Number:

    IKW50N65H5FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    231 ns

  • Turn-on Time-Nom (ton):

    35 ns

  • VCEsat-Max:

    2.1 V

IKW50N65H5FKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IKW50N65H5FKSA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • The maximum allowable power dissipation of the IKW50N65H5FKSA1 depends on the operating conditions, but the datasheet specifies a maximum power dissipation of 150W at a case temperature of 25°C.

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IKW50N65H5FKSA1 Overview

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