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IKW75N65EH5XKSA1 - Infineon

Description: IGBT Transistors INDUSTRY 14

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IKW75N65EH5XKSA1 - Infineon  - 3D model
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IKW75N65EH5XKSA1 Details

  • Manufacturer Part Number:

    IKW75N65EH5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    90 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    395 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    215 ns

  • Turn-on Time-Nom (ton):

    61 ns

  • VCEsat-Max:

    2.1 V

IKW75N65EH5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IKW75N65EH5XKSA1 is -55°C to 175°C.
  • To ensure safe operating area (SOA) for the IKW75N65EH5XKSA1, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the application's thermal and electrical requirements.
  • The recommended gate resistor value for the IKW75N65EH5XKSA1 depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but consult the datasheet and application notes for more information.
  • To handle ESD protection for the IKW75N65EH5XKSA1, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices in the circuit design.
  • The maximum allowed voltage for the gate-source (Vgs) is ±20V, and for the gate-drain (Vgd) it is ±30V, according to the datasheet.

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IKW75N65EH5XKSA1 Overview

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