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IMH1AT110 - ROHM Semiconductor

Description: NPN+NPN, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor)

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IMH1AT110 Details

  • Manufacturer Part Number:

    IMH1AT110

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-74

  • Package Description:

    SC-74, 6 PIN

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO 1

  • Collector Current-Max (IC):

    0.03 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    56

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

IMH1AT110 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance of IMH1AT110 includes a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowable voltage for IMH1AT110 is 110V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, IMH1AT110 can be used in switching applications, but it is recommended to follow the switching characteristics and safe operating area (SOA) guidelines provided in the datasheet to ensure reliable operation.
  • To calculate the power dissipation of IMH1AT110, you can use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

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IMH1AT110 Overview

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Part Image IMH1AT109 ROHM Semiconductor

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