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IMH23T110 - ROHM Semiconductor

Description: NPN+NPN, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor)

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IMH23T110 - ROHM Semiconductor PCB footprint - Other - Other - IMH23T110-2
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IMH23T110 - ROHM Semiconductor  - 3D model - Other - IMH23T110-2
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IMH23T110 Details

  • Manufacturer Part Number:

    IMH23T110

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-74

  • Package Description:

    SMT6, 6 PIN

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    20 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    820

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

IMH23T110 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF capacitor is recommended for CBYP.
  • The maximum power dissipation (PD) is 1.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • The device is rated for operation up to 125°C. However, the maximum junction temperature (TJ) should not exceed 150°C to ensure reliable operation.
  • Handle the device with an anti-static wrist strap or mat. Avoid touching the device's pins or handling it in environments with high electrostatic potential.

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IMH23T110 Overview

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