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IMH9AT110 - ROHM Semiconductor

Description: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

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IMH9AT110 - ROHM Semiconductor - PCB symbol
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IMH9AT110 - ROHM Semiconductor PCB footprint - Other - Other - SOT-457_2026-3.3
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IMH9AT110 - ROHM Semiconductor - 3D model - Other - SOT-457_2026-3.3
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IMH9AT110 Details

  • Manufacturer Part Number:

    IMH9AT110

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-74

  • Package Description:

    SC-74, 6 PIN

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO 4.7

  • Collector Current-Max (IC):

    0.07 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    68

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

IMH9AT110 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance of IMH9AT110 includes a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowable voltage for IMH9AT110 is 110V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, IMH9AT110 can be used in switching applications, but it is recommended to follow the switching characteristics and safe operating area (SOA) guidelines provided in the datasheet to ensure reliable operation.
  • To protect IMH9AT110 from ESD, it is recommended to follow proper handling and storage procedures, and to use ESD protection devices such as TVS diodes or ESD protection ICs in the circuit design.

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IMH9AT110 Overview

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