IMW65R027M1H - Infineon

IMW65R027M1H Details

• Manufacturer Part Number:

  IMW65R027M1H

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Country Of Origin:

  Austria, Mainland China

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  3

• Additional Feature:

  HIGH RELIABILITY

• Avalanche Energy Rating (Eas):

  326 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  650 V

• Drain Current-Max (ID):

  47 A

• Drain-source On Resistance-Max:

  0.034 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  22 pF

• JEDEC-95 Code:

  TO-247

• JESD-30 Code:

  R-PSFM-T3

• JESD-609 Code:

  e3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  189 W

• Pulsed Drain Current-Max (IDM):

  185 A

• Surface Mount:

  NO

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  10

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON CARBIDE