Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IMZ120R090M1HXKSA1 - Infineon

Description: CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET

Download IMZ120R090M1HXKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IMZ120R090M1HXKSA1 - Infineon - PCB symbol
click to zoom
PCB Footprints
IMZ120R090M1HXKSA1 - Infineon PCB footprint - Other - Other - PG-TO247-4
click to zoom
3D Models
IMZ120R090M1HXKSA1 - Infineon - 3D model - Other - PG-TO247-4
click to zoom

IMZ120R090M1HXKSA1 Details

  • Manufacturer Part Number:

    IMZ120R090M1HXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

IMZ120R090M1HXKSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area for heat dissipation, and a thermal via array under the device to improve heat transfer. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 3 W/mK, and follow the recommended PCB layout guidelines. Also, consider using a thermocouple to monitor the device temperature.
  • The maximum allowed voltage transient on the input pins is 20% above the maximum recommended operating voltage, but not exceeding 40V. Exceeding this may cause damage to the device.
  • Yes, the IMZ120R090M1HXKSA1 is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, additional testing and validation may be required for specific use cases.
  • Use a logic analyzer or oscilloscope to monitor the device's input and output signals, and check for voltage drops, noise, or other anomalies. Consult the datasheet and application notes for troubleshooting guidelines.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IMZ120R090M1HXKSA1 Overview

Use the download button to access the IMZ120R090M1HXKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IMZ12, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IMZ120R090M1HXKSA1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑