IMZ12 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IMZ120R030M1HXKSA1 Infineon	1	MOSFET SIC DISCRETE	Other	IMZ120R030M1HXKSA1	3D model available Symbol and footprint available 3	1 Download Model
	IMZ120R060M1H Infineon	1	N-Channel 1200 V 36A (Tc) 150W (Tc) Through Hole PG-TO247-4-1	Other	IMZ120R060M1H	3D model available Symbol and footprint available 3	1 Download Model
	IMZ120R090M1HXKSA1 Infineon	1	CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET	Other	IMZ120R090M1HXKSA1	3D model available Symbol and footprint available 3	1 Download Model
	IMZ120R350M1HXKSA1 Infineon	1	N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1	Other	IMZ120R350M1HXKSA1	3D model available Symbol and footprint available 3	1 Download Model

	IMZ120R140M1HXKSA1 Infineon	1	CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET 1200V 19A 140mΩ	Other	IMZ120R140M1HXKSA1	3D model available Symbol and footprint available 3	1 Download Model
	IMZ120R060M1HXKSA1 Infineon	1	INFINEON - IMZ120R060M1HXKSA1 - MOSFET Transistor, N Channel, 36 A, 1.2 kV, 0.06 ohm, 18 V, 4.5 V	Other	IMZ120R060M1HXKSA1	3D model available Symbol and footprint available 3	1 Download Model
	IMZ120R140M1H Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 1200V, 0.239ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		IMZ120R140M1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	IMZ120R090M1H Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 1200V, 0.16ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		IMZ120R090M1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	IMZ120R030M1H Infineon Technologies AG	1	Power Field-Effect Transistor, 56A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		IMZ120R030M1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	IMZ120R220M1H Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 1200V, 0.372ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		IMZ120R220M1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	IMZ120R350M1H Infineon Technologies AG	1	Power Field-Effect Transistor, 4.7A I(D), 1200V, 0.598ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		IMZ120R350M1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	IMZ120R045M1 Infineon Technologies AG	1	Power Field-Effect Transistor, 52A I(D), 1200V, 0.059ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		IMZ120R045M1	3D model not available Symbol and footprint not available 0	0 Build or Request

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