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INA215BQDCKRQ1 - Texas Instruments

Description: Automotive, 26-V, Bi-Directional, Zero-Drift, Precision, Low-/High-Side, Volt. Out Current Sense Amp

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INA215BQDCKRQ1 Details

  • Manufacturer Part Number:

    INA215BQDCKRQ1

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Date Of Intro:

    2016-05-01

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Bias Current-Max (IIB) @25C:

    35 µA

  • Common Mode Voltage-Max:

    26 V

  • Common-mode Reject Ratio-Min:

    105 dB

  • Common-mode Reject Ratio-Nom:

    140 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    60 µV

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e4

  • Length:

    2 mm

  • Low-Bias:

    NO

  • Low-Offset:

    YES

  • Micropower:

    YES

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Power:

    NO

  • Programmable Power:

    NO

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.1 mm

  • Slew Rate-Nom:

    0.4 V/us

  • Supply Current-Max:

    0.115 mA

  • Supply Voltage Limit-Max:

    26 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    40

  • Voltage Gain-Nom:

    75

  • Wideband:

    NO

  • Width:

    1.25 mm

INA215BQDCKRQ1 Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the INA215BQDCKRQ1 is 670mW at a junction temperature of 150°C. However, it's recommended to keep the power dissipation below 400mW to ensure reliable operation.
  • The gain error of the INA215BQDCKRQ1 can be calculated using the formula: Gain Error (%) = (VOS / VREF) x 100, where VOS is the offset voltage and VREF is the reference voltage. The typical gain error is around 0.1%.
  • To minimize noise and EMI, it's recommended to follow a star-grounding layout, keep the input and output traces short and separate, and use a ground plane to shield the device. Additionally, decoupling capacitors should be placed close to the device pins.
  • The INA215BQDCKRQ1 is rated for operation up to 125°C, but it's recommended to derate the power dissipation and ensure proper thermal management to prevent overheating. Consult the datasheet for more information on thermal characteristics.
  • Calibration involves trimming the offset voltage and gain to ensure accurate current measurements. This can be done using an external calibration circuit or by using the device's internal calibration registers. Consult the datasheet and application notes for more information.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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