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IPA65R045C7 - Infineon

Description: MOSFET HIGH POWER BEST IN CLASS

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PCB Footprints
IPA65R045C7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220 fullpack
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3D Models
IPA65R045C7 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220 fullpack
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IPA65R045C7 Details

  • Manufacturer Part Number:

    IPA65R045C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TO-220FP, 3 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    249 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    212 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R045C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPA65R045C7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 150W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended PCB layout for the IPA65R045C7 involves using a multi-layer PCB with a solid ground plane and a separate power plane. The device should be placed near the power source, and the power traces should be as short and wide as possible to minimize inductance and resistance. Additionally, ensure that the PCB is designed to handle the high currents and voltages involved.
  • To protect the IPA65R045C7 from overvoltage and overcurrent, it's recommended to use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider using a fuse or a current-limiting resistor in series with the device to prevent excessive current flow.
  • The recommended gate drive voltage for the IPA65R045C7 is between 10V and 15V, with a maximum gate drive voltage of 20V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.

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IPA65R045C7 Overview

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