Part Image

IPA65R065C7 - Infineon

Description: MOSFET HIGH POWER BEST IN CLASS

Download IPA65R065C7 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPA65R065C7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220 fullpack
click to zoom
3D Models
IPA65R065C7 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220 fullpack
click to zoom

IPA65R065C7 Details

  • Manufacturer Part Number:

    IPA65R065C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    145 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R065C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPA65R065C7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device and ensure good thermal contact. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is specified in the datasheet. Additionally, ensure good airflow around the device and heat sink to prevent overheating.
  • For optimal performance and reliability, it's recommended to follow the PCB layout and design guidelines provided in the datasheet and application notes. This includes using a multi-layer PCB with a solid ground plane, keeping the power traces short and wide, and using decoupling capacitors to reduce noise and oscillations.
  • To protect the IPA65R065C7 from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage to the recommended maximum rating. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • The recommended gate drive circuits and components for the IPA65R065C7 are specified in the datasheet and application notes. This includes using a gate driver IC with a suitable output current and voltage rating, and selecting the correct gate resistor and capacitor values to ensure proper switching performance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPA65R065C7 Overview

Use the download button to access the IPA65R065C7 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPA65, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPA65R065C7

Showing 0 results