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IPA65R065C7XKSA1 - Infineon

Description: MOSFET HIGH POWER BEST IN CLASS

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IPA65R065C7XKSA1 - Infineon  - 3D model
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IPA65R065C7XKSA1 Details

  • Manufacturer Part Number:

    IPA65R065C7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    145 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R065C7XKSA1 Frequently Asked Questions (FAQs)

  • The IPA65R065C7XKSA1 has an operating temperature range of -40°C to 150°C, with a junction temperature of up to 175°C.
  • The device has a thermal pad on the bottom side, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation. Additionally, the PCB design should allow for good airflow and thermal conduction.
  • The recommended gate drive voltage for the IPA65R065C7XKSA1 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • The device has built-in overvoltage protection, but it's still recommended to use external protection circuits, such as TVS diodes or zener diodes, to protect against overvoltage and overcurrent conditions.
  • The maximum allowed dv/dt for the IPA65R065C7XKSA1 is 50V/ns, which should be taken into account when designing the gate drive circuitry.

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IPA65R065C7XKSA1 Overview

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