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IPA65R095C7 - Infineon

Description: MOSFET HIGH POWER BEST IN CLASS

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PCB Footprints
IPA65R095C7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220 fullpack
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3D Models
IPA65R095C7 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220 fullpack
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IPA65R095C7 Details

  • Manufacturer Part Number:

    IPA65R095C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    GREEN, PLASTIC, TO-220FP, 3 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    118 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R095C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPA65R095C7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins. You can also consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • For optimal performance and reliability, it's recommended to follow Infineon's guidelines for PCB layout and design. This includes using a 4-layer PCB with a solid ground plane, keeping the power traces short and wide, and using a common source connection for the high-side and low-side FETs. Additionally, ensure proper decoupling and filtering of the power supply lines.
  • To protect the IPA65R095C7 from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider using a fuse or a current-limiting resistor in series with the power supply lines to prevent damage from excessive current.
  • The recommended gate drive voltage for the IPA65R095C7 is between 10V and 15V, with a maximum gate-source voltage of 20V. Using a higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.

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IPA65R095C7 Overview

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