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IPA65R125C7XKSA1 - Infineon

Description: MOSFET HIGH POWER BEST IN CLASS

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IPA65R125C7XKSA1 - Infineon - PCB symbol
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PCB Footprints
IPA65R125C7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220 fullpack_
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3D Models
IPA65R125C7XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 220 fullpack_
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IPA65R125C7XKSA1 Details

  • Manufacturer Part Number:

    IPA65R125C7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    89 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R125C7XKSA1 Frequently Asked Questions (FAQs)

  • The IPA65R125C7XKSA1 has an operating temperature range of -40°C to 150°C, making it suitable for high-temperature applications.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good airflow around the device. Additionally, the device's thermal pad should be connected to a copper plane on the PCB to dissipate heat efficiently.
  • A recommended PCB layout for the IPA65R125C7XKSA1 includes a symmetrical layout, with the device placed at the center of the board. The power stage should be separated from the control stage, and decoupling capacitors should be placed close to the device. A 2-layer or 4-layer PCB is recommended, with a minimum of 1 oz copper thickness.
  • The IPA65R125C7XKSA1 has built-in overvoltage protection (OVP) and undervoltage protection (UVP) features. However, additional external protection circuits can be added to ensure the device is protected from voltage transients and spikes. A TVS diode or a zener diode can be used to clamp the voltage and prevent damage to the device.
  • The recommended gate drive voltage for the IPA65R125C7XKSA1 is between 10V and 15V, with a maximum gate drive current of 2A. A higher gate drive voltage can reduce the device's switching losses, but may also increase the risk of gate oxide damage.

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IPA65R125C7XKSA1 Overview

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