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IPA65R150CFD - Infineon

Description: Infineon IPA65R150CFD MOSFET Transistor

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IPA65R150CFD Details

  • Manufacturer Part Number:

    IPA65R150CFD

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220 FP, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    614 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    22.4 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34.7 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R150CFD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPA65R150CFD is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capability at higher temperatures to ensure reliable operation.
  • To ensure proper cooling, follow the thermal design guidelines provided in the datasheet and application notes. This includes providing a sufficient heat sink, using thermal interface materials, and ensuring good airflow around the device. Additionally, consider using thermal simulation tools to optimize your design.
  • Infineon provides a recommended PCB layout and design considerations in the datasheet and application notes. Key considerations include minimizing parasitic inductance, using a solid ground plane, and ensuring proper decoupling and filtering. It's also recommended to follow the guidelines for PCB layout and design provided in the Infineon Power MOSFET Application Note.
  • When selecting a gate driver for the IPA65R150CFD, consider the device's gate charge, threshold voltage, and switching frequency requirements. Infineon recommends using a gate driver with a high current capability, fast rise and fall times, and a suitable input voltage range. The Infineon Gate Driver Selection Guide can be a helpful resource in selecting the correct gate driver.
  • The IPA65R150CFD has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. This includes using ESD-safe materials, grounding yourself before handling the device, and avoiding excessive mechanical stress or vibration. Refer to the Infineon ESD Protection and Handling Precautions document for more information.

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IPA65R150CFD Overview

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Part Image IPA65R150CFDXKSA2 Infineon Technologies AG

Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB