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IPA65R190CFD - Infineon

Description: Infineon IPA65R190CFD N-channel MOSFET Transistor, 17.5 A, 700 V, 3+Tab-Pin TO-220FP

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PCB Footprints
IPA65R190CFD - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220-FP
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3D Models
IPA65R190CFD - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220-FP
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IPA65R190CFD Details

  • Manufacturer Part Number:

    IPA65R190CFD

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, FULL PACK-3

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    484 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17.5 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    57.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R190CFD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPA65R190CFD is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPA65R190CFD is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPA65R190CFD is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the IPA65R190CFD from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.

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IPA65R190CFD Overview

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Part Image IPA65R190CFDXKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB