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IPA65R280E6 - Infineon

Description: Infineon IPA65R280E6 N-channel MOSFET Transistor, 13.8 A, 700 V, 3-Pin TO-220

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PCB Footprints
IPA65R280E6 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220-FP
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3D Models
IPA65R280E6 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220-FP
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IPA65R280E6 Details

  • Manufacturer Part Number:

    IPA65R280E6

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    13.8 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32 W

  • Pulsed Drain Current-Max (IDM):

    39 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA65R280E6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPA65R280E6 is -40°C to 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate resistor value for the IPA65R280E6 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPA65R280E6 is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the IPA65R280E6 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, as well as a current sense resistor and a fuse or a current limiter.

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IPA65R280E6 Overview

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Part Image IPA65R280E6XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB